Comparison of Process Options for Improving Backend-of-Line Reliability in 28 nm Node Technologies and Beyond-Reference-Cited by-同舟云学术

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Comparison of Process Options for Improving Backend-of-Line Reliability in 28 nm Node Technologies and Beyond

Published:2011-05-20 Issue:5 Volume:50 Page:05EA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aubel Oliver,Hennesthal Christian,Hauschildt Meike,Poppe Jens,Hahn Jens,Boemmels Juergen,Nopper Markus,Seidel Robert

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Analysis of Al Doping Effects on Resistivity and Electromigration of Copper Interconnects

2. Copper–dielectric cap interface with enhanced reliability for 45nm technology and beyond

3. Role of Impurity Segregation into Cu/Cap Interface and Grain Boundary in Resistivity and Electromigration of Cu/Low-kInterconnects

4. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2

5. Electromigration in Al(Cu) two‐level structures: Effect of Cu and kinetics of damage formation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Moisture absorption impact on Cu alloy/low-k reliability during process queue time;Microelectronic Engineering;2013-06

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