Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors
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4. 12.4: Late-News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly-Si TFTs
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4. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03
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