(Invited) Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics

Abstract

A technique for low-temperature (≤300°C) formation of large-grain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented large-grain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of large-grain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.