Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization-Reference-Cited by-同舟云学术

Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization

Published:2011-04-20 Issue:4 Volume:50 Page:04DH10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujii Shuntaro,Kuroki Shin-Ichiro,Kotani Koji,Ito Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Conductivity behavior in polycrystalline semiconductor thin film transistors

2. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

3. Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors

4. Characterization of Novel Polycrystalline Silicon Thin-Film Transistors with Long and Narrow Grains

5. Sequential Lateral Solidification Processing for Polycrystalline Si TFTs

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