Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy-Reference-Cited by-同舟云学术

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

Published:2011-03-22 Issue: Volume:50 Page:031004
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ivaldi Francesco,Meissner Christian,Domagala Jarosław,Kret Sławomir,Pristovsek Markus,Högele Michael,Kneissl Michael

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. Stranski-Krastanov Growth of InN Nanostructures on GaN Studied by RHEED, STM and AFM

2. Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

3. Influence of the Si cap layer on the SiGe islands morphology

4. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy

5. Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

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