Leakage Current Reduction Mechanism of Oxide–Nitride–Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment-Reference-Cited by-同舟云学术

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Leakage Current Reduction Mechanism of Oxide–Nitride–Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment

Published:2011-04-20 Issue:4 Volume:50 Page:041501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Woong,Jee Jeonggeun,Yoo Dae-Han,Lee Eun-Young,Bok Jinkwon,Hyung Younwoo,Kim Seoksik,Kang Chang-Jin,Moon Joo-Tae,Roh Yonghan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. A 4-Mbit CMOS EPROM

2. ONO inter-poly dielectric scaling for nonvolatile memory applications

3. Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices

4. High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

5. On the electrical conduction in the interpolysilicon dielectric layers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sliding-Mode Analysis of the Dynamics of Sigma-Delta Controls of Dielectric Charging;IEEE Transactions on Industrial Electronics;2016-04

2. Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics;Microelectronics Reliability;2015-04

3. Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications;Solid-State Electronics;2014-04

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