Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum-Reference-Cited by-同舟云学术

Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum

Published:2011-01-20 Issue: Volume:50 Page:01AD06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ah Reum,Jeon Hunsoo,Lee Gang-Seok,Ok Jin-Eun,Jo Dong-Wan,Kim Kyoung Hwa,Yi Sam Nyung,Yang Min,Ahn Hyung Soo,Cho Chae-Ryong,Kim Suok-Whan,Lee Jae-Hak,Ha Hong-Ju

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference16 articles.

1. One-step synthesis and double emission (Ca1+x−yEuy)Ga2S4+x phosphor for white LEDs

2. Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs

3. Electronic characteristics of Au/AlxGa1−xN structures grown with various x values

4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

5. Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions

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2. Enhance Light Emitting Diode Light Extraction Efficiency by an Optimized Spherical Cap-Shaped Patterned Sapphire Substrate;Japanese Journal of Applied Physics;2013-09-01

3. Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights;Journal of Nanomaterials;2012