Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes

Published:2015-11-18 Issue:11 Volume:54 Page:115108
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Che Zhen¹,Zhang Jun²,Yu Xinyu³,Xie Mengyuan³,Yu Jianhui²,Lu Huihui²,Luo Yunhan²,Guan Heyuan²,Chen Zhe²

Affiliation:

1. Jinan University, College of Information Science and Technology, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

2. Jinan University, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, ChinacJinan University, Department of Optoelectronic Engineeri

3. Jinan University, Department of Optoelectronic Engineering, 601 Huangpu Avenue West, Guangzhou, Guangdong Province 510632, China

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Solid-State Light Sources Getting Smart

2. GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates;Huang,2014

3. Luminescence degradation of InGaN/GaN violet LEDs

4. Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

5. Enhanced ultraviolet emission in photoluminescence of GaN film covered by ZnO nanoflakes

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