Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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3. Factor Analysis of Plasma-Induced Damage in Bulk FinFET Technology;IEEE Electron Device Letters;2018-07
4. Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators;Japanese Journal of Applied Physics;2018-03-08
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