Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N,N′-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics-Reference-Cited by-同舟云学术

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N,N′-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Published:2018-08-01 Issue:15 Volume:51 Page:6011-6020
ISSN:0024-9297
Container-title:Macromolecules
language:en
Short-container-title:Macromolecules

Author:

Zhang Qingyang,Kale Tejaswini S.,Plunkett Evan,Shi Wei,Kirby B. J.¹,Reich Daniel H.,Katz Howard E.^ORCID

Affiliation:

1. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Inorganic Chemistry,Polymers and Plastics,Organic Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.macromol.8b00596

Reference43 articles.

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2. Stretchable Organic Semiconductor Devices

3. Polymer and Organic Nonvolatile Memory Devices

4. Towards printable organic thin film transistor based flash memory devices

5. Towards the Development of Flexible Non-Volatile Memories

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