Sustained Flexible Photonic Transistor Memories Based on Fully Natural Floating Gate Electrets-Reference-Cited by-同舟云学术

Sustained Flexible Photonic Transistor Memories Based on Fully Natural Floating Gate Electrets

Published:2023-07-10 Issue:28 Volume:15 Page:33829-33837
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Chun-Kai¹²,Ho Jin-Chieh¹²,Hung Chih-Chien¹²,Chen Wei-Cheng¹²,Satoh Toshifumi³^ORCID,Chen Wen-Chang¹²^ORCID

Affiliation:

1. Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

2. Advanced Research Center for Green Materials Science and Technology, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

3. Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan

Funder

Hokkaido University

Advanced Research Center for Green Materials Science and Technology, National Taiwan University

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c05981

Reference37 articles.

1. When Flexible Organic Field‐Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things

2. Transparent and Flexible In2O3 Thin Film for Multilevel Nonvolatile Photomemory Programmed by Light

3. Flexible and Rewritable Non‐Volatile Photomemory Based on Inorganic Lanthanide‐Doped Photochromic Thin Films

4. Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

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