New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference6 articles.
1. Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
2. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
3. Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric
4. Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)
5. Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cu(In,Al)Se2Photovoltaic Thin Film Solar Cell from Electrodeposited Stacked Metallic Layers;ECS Journal of Solid State Science and Technology;2020-02-19
2. Large-Area Rolled-Up Nanomembrane Capacitor Arrays for Electrostatic Energy Storage;Advanced Energy Materials;2014-03-17
3. Design and fabrication of a high-density multilayer metal–insulator–metal capacitor based on selective etching;Journal of Micromechanics and Microengineering;2013-02-06
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