Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric-Reference-Cited by-同舟云学术

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Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

Published:2005-10 Issue:10 Volume:26 Page:728-730
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chiang K.C.,Lai C.H.,Chin A.,Wang T.J.,Chiu H.F.,Jiann-Ruey Chen ,McAlister S.P.,Chi C.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32347/01510741.pdf?arnumber=1510741

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