InGaP/GaAs Sub-Square-Micron Emitter HBT withfmax> 100GHz-Reference-Cited by-同舟云学术

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InGaP/GaAs Sub-Square-Micron Emitter HBT withfmax> 100GHz

Published:1997-03-30 Issue:Part 1, No. 3B Volume:36 Page:1799-1803
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hirata Koji,Tanoue Tomonori,Masuda Hiroshi,Uchiyama Hiroyuki,Terano Akihisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP–InGaAs, InGaP–GaAs, and SiGe Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2006-05-09

2. Fabrication and Modeling of Submicon InGaP/GaAs HBTs by Using a Structure-Based Hybrid-$pi$ Small-Signal Model;Journal of the Korean Physical Society;2003-11-15

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