An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP–InGaAs, InGaP–GaAs, and SiGe Heterojunction Bipolar Transistors
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Published:2006-05-09
Issue:5A
Volume:45
Page:3949-3954
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Lin Yo-Sheng,Chen Chi-Chen,Lu Shey-Shi
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering