Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure-Reference-Cited by-同舟云学术

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Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure

Published:1997-06-15 Issue:Part 2, No. 6B Volume:36 Page:L771-L773
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Niwa Atsuko,Ohtoshi Tsukuru,Kuroda Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 1.5 µm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD;Semiconductor Science and Technology;2006-02-01

2. Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects;Journal of Applied Physics;2000-01

3. Effects of macroscopic polarization in III-V nitride multiple quantum wells;Physical Review B;1999-09-15

4. Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1998-06

5. Orientation dependence of optical gain in zincblende-GaN strained-quantum-well lasers;IEEE Journal of Selected Topics in Quantum Electronics;1998

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