Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

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Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing

Published:1997-07-15 Issue:Part 1, No. 7A Volume:36 Page:4278-4282
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Hsiao-Yi,Chang Chun-Yen,Lei Tan Fu,Cheng Juing-Yi,Tseng Hua-Chou,Chen Liang-Po

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D Integration Technologies – An Overview;Materials for Advanced Packaging;2009

2. Microelectronically fabricated LiCoO[sub 2]∕SiO[sub 2]/polycrystalline-silicon power cells planarized by chemical mechanical polishing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

3. 3-D ICS DSM Interconnect Performance Modeling and Analysis;Interconnect Technology and Design for Gigascale Integration;2003

4. Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors;Vacuum;2002-09

5. 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration;Proceedings of the IEEE;2001-05

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