High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique-Reference-Cited by-同舟云学术

High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

Published:2010-03-26 Issue:4 Volume:3 Page:041302
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Dissanayake Sanjeewa,Tomiyama Kentaro,Sugahara Satoshi,Takenaka Mitsuru,Takagi Shinichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=4/a=041302/pdf

Reference10 articles.

1. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

2. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

3. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

4. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

5. High quality Germanium-On-Insulator wafers with excellent hole mobility

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