Author:
Liu Huan,Han Genquan,Zhou Jiuren,Liu Yan,Hao Yue
Publisher
Springer Science and Business Media LLC
Reference9 articles.
1. Liu B, Gong X, Zhan C, et al. Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate. IEEE Trans Electron Dev, 2013, 60: 1852–1860
2. Gong X, Han G, Bai F, et al. Germanium-Tin (GeSn) p-Channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400°C Si2H6 passivation. IEEE Electron Dev Lett, 2013, 34: 339–341
3. Zhang R, Taoka N, Huang P-C, et al. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation. In: Proceedings of International Electron Devices Meeting, Washington, 2011. 642–645
4. Liu H, Han G, Xu Y, et al. Germanium-Tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400°C Si2H6 passivation. IEEE Electron Dev Lett, 2019, 40: 371–374
5. Lin C-M, Chang H-C, Chen Y-T, et al. Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ ∼43, ∼ 2 × 10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff = 6 × 105, and high strain response. In: Proceedings of International Electron Devices Meeting, San Francisco, 2012. 1–4
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献