An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process-Reference-Cited by-同舟云学术

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An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process

Published:2010-02-26 Issue:3 Volume:3 Page:031001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Lin Chia-Feng,Dai Jing-Jie,Lin Ming-Shiou,Chen Kuei-Ting,Huang Wan-Chun,Lin Chun-Min,Jiang Ren-Hao,Huang Yu-Chieh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=3/a=031001/pdf

Reference8 articles.

1. Chemical lift-off of GaN epitaxial films grown on c-sapphire substrates with CrN buffer layers

2. Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

3. Doping selective lateral electrochemical etching of GaN for chemical lift-off

4. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

5. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates;Advanced Science;2024-09-03

2. Semiconductor Membrane Exfoliation: Technology and Application;Advanced Electronic Materials;2024-04-29

3. Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate;Micromachines;2023-03-29

4. Fabrication method of GaN template for high-speed chemical lift-off;AIP Advances;2023-03-01

5. Laser lift-off mechanism and optical-electric characteristics of red Micro-LED devices;Optics Express;2023-02-17

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