Influence of High-Energy Electron Beam on Source Fluxes during Molecular Beam Epitaxy Growth on Photoluminescence Upconversion from the GaAs Band Gap
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=6/a=065501/pdf
Reference10 articles.
1. The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation
2. Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1−xAs∕Al0.17Ga0.83As quantum wells
3. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena inGaAs/AlxGa1−xAsandInGaP2/AlxGa1−xAsheterostructures
4. Photoluminescence up-conversion inGaAs/AlxGa1−xAsheterostructures
5. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism;Physical Review B;2016-06-09
2. Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
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