Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=3/a=031301/pdf
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1. On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
2. Vertical N-channel MOSFETs for extremely high density memories: the impact of interface orientation on device performance
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5. Hydrophobic silicon wafer bonding
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