Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays-Reference-Cited by-同舟云学术

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Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays

Published:1979-05 Issue:5 Volume:46 Page:1608-1615
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Takahashi Toshio¹,Kikuta Seishi¹

Affiliation:

1. Institute of Industrial Science, University of Tokyo

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.46.1608

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray Standing Wave Studies of Minerals and Mineral Surfaces: Principles and Applications;Reviews in Mineralogy and Geochemistry;2002-01-01

2. Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction;Applied Surface Science;2000-06

3. New Method for Studying Surface and Interface Structures Using Kossel Lines;Japanese Journal of Applied Physics;1993-11-15

4. Dynamical Diffraction Effect on Fluorescent X-Ray Emission in Absorbing Perfect Germanium Crystals in the Laue Geometry;Journal of the Physical Society of Japan;1993-02-15

5. Asymmetric X-Ray Diffraction;Crystallography Reviews;1992-11

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