Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures-Reference-Cited by-同舟云学术

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Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures

Published:2010-01-15 Issue:1 Volume:79 Page:013701
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Tayagaki Takeshi¹,Fukatsu Susumu²,Kanemitsu Yoshihiko¹³

Affiliation:

1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan

2. Graduate School of Arts and Sciences, The University of Tokyo, Meguro, Tokyo 153-8902, Japan

3. Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8510, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.79.013701

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence;Journal of Luminescence;2016-01

2. Multiple Exciton Generation and Recombination in Carbon Nanotubes and Nanocrystals;Accounts of Chemical Research;2013-02-19

3. Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells;Japanese Journal of Applied Physics;2012-10-22

4. Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells;Japanese Journal of Applied Physics;2012-10-01

5. High-density carrier dynamics in Ge/Si quantum dots studied by time-resolved photoluminescence spectroscopy;Journal of Non-Crystalline Solids;2012-09

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