Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO2Metal Gate Stacks-Reference-Cited by-同舟云学术

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Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO2Metal Gate Stacks

Published:2005-04-21 Issue:4B Volume:44 Page:2252-2256
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sasaki Takaoki,Akasaka Yasushi,Miyagawa Kazuhiro,Hoshi Takeshi,Watanabe Yasuhiko,Ootsuka Fumio,Yasuhira Mitsuo,Arikado Tsunetoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions;Journal of Vacuum Science & Technology B;2020-01

2. Impact of Deuterium and Fluorine Incorporation on Weibull Distribution of Dielectric Breakdown in Gate Dielectrics;ECS Transactions;2009-05-15

3. Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si;Microelectronic Engineering;2009-03

4. Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor;Thin Solid Films;2008-10

5. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams;Journal of Applied Physics;2007-09

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