Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations-Reference-Cited by-同舟云学术

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Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations

Published:2005-04-21 Issue:4B Volume:44 Page:2701-2705
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Young-Tae,Hwang Young-Nam,Lee Keun-Ho,Lee Se-Ho,Jeong Chang-Wook,Ahn Su-Jin,Yeung Fai,Koh Gwan-Hyeob,Jeong Heong-Sik,Chung Won-Young,Kim Tai-Kyung,Park Young-Kwan,Kim Ki-Nam,Kong Jeong-Taek

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A survey on techniques for improving Phase Change Memory (PCM) lifetime;Journal of Systems Architecture;2023-11

2. Development of Reflow Fill of CGeSbTe Films for Sub‐20 nm Cells in 3D Cross‐Point Memory;Advanced Materials Technologies;2022-09-25

3. Thermoelectric Effects on Amorphization Process of Blade-Type Phase Change Random Access Memory;IEEE Transactions on Electron Devices;2021-12

4. Scalable CGeSbTe-based phase change memory devices employing U-shaped cells;Thin Solid Films;2017-07

5. A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach;Semiconductor Science and Technology;2016-10-10

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