Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates-Reference-Cited by-同舟云学术

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Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

Published:2005-12-08 Issue:12 Volume:44 Page:8435-8440
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shiojima Kenji,Makimura Takashi,Suemitsu Tetsuya,Shigekawa Naoteru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2022-07-27

2. Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes;Japanese Journal of Applied Physics;2022-02-23

3. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays;Light: Science & Applications;2021-04-30

4. Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation;Electronic Materials Letters;2015-03

5. High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz;IEEE Electron Device Letters;2009-02

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