Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C4F8and Si2H6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics-Reference-Cited by-同舟云学术

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Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C4F8and Si2H6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics

Published:2005-07-08 Issue:7A Volume:44 Page:4886-4890
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Howoon,Shin Jang-Kyoo,Kwon Dae-Hyuk,Seo Hwa-Il,Lee Gil S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zeta potential variations in bonding states of fluorocarbon films deposited by plasma-enhanced chemical vapor deposition;Japanese Journal of Applied Physics;2023-05-09

2. Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-07

3. Rapid Formation of Transparent Superhydrophobic Film on Glasses by He/CH4/C4F8Plasma Deposition at Atmospheric Pressure;Plasma Processes and Polymers;2015-01-19

4. c-C4F8Plasmas for the Deposition of Fluorinated Carbon Films;Plasma Processes and Polymers;2014-02-12

5. Improvement of adhesion strength and scratch resistance of fluorocarbon thin films by cryogenic treatment;Applied Surface Science;2014-01

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