Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET-Reference-Cited by-同舟云学术

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Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET

Published:2004-04-27 Issue:4B Volume:43 Page:2134-2139
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanabe Naoya,Kojima Takeaki,Maeda Yasuhiro,Nishisaka Mika,Asano Tanemasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies;IEEE Electron Device Letters;2024-06

2. Dynamic Strain of Ultrasonic Cu and Au Ball Bonding Measured In-Situ by Using Silicon Piezoresistive Sensor;2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05

3. Electrical Device Characterisation on Ultra-thin Chips;Ultra-thin Chip Technology and Applications;2010-11-12

4. Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor;Japanese Journal of Applied Physics;2010-04-20

5. Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress;Thin Solid Films;2009-01

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