Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate-Reference-Cited by-同舟云学术

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Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

Published:2004-04-27 Issue:4B Volume:43 Page:1925-1929
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nanjo Takuma,Miura Naruhisa,Oishi Toshiyuki,Suita Muneyoshi,Abe Yuji,Ozeki Tatsuo,Nakatsuka Shigenori,Inoue Akira,Ishikawa Takahide,Matsuda Yoshio,Ishikawa Hiroyasu,Egawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability;Electronics;2018-12-03

2. Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment;physica status solidi (a);2018-05-21

3. Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

4. Performance enhancement of gate-annealed AlGaN/GaN HEMTs;Journal of the Korean Physical Society;2017-03

5. Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors;Japanese Journal of Applied Physics;2016-04-14

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