Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment-Reference-Cited by-同舟云学术

Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

Published:2018-05-21 Issue:14 Volume:215 Page:1800092
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wang Chong¹,He Qing¹,Wu Ji¹,Zheng Xue-Feng¹,He Yun-Long¹,Wang Xin¹,Tian Ye¹,Mao Wei¹,Ma Xiao-Hua¹,Zhang Jin-Cheng¹,Hao Yue¹

Affiliation:

1. Key Lab of Wide Band gap Semiconductor Materials and Devices, The School of Microelectronics, Xidian University; Xi‘an 710071 China

Funder

National Key Research and Development Program of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800092/fullpdf

Reference18 articles.

1. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2. Microwave AlGaN/GaN HFETs

3. A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

4. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

5. Effects of oxygen plasma treatment on V th uniformity of recessed-gate AlGaN/GaN HEMTs

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1. Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT;Micro and Nanostructures;2024-02

2. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures;Journal of Materials Science: Materials in Electronics;2023-04

3. The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage;Applied Physics Express;2023-03-01