Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy

Published:2004-06-18 Issue:No. 7A Volume:43 Page:L930-L933
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suemasu Takashi,Takauji Motoki,Li Cheng,Ozawa Yoshinori,Ichida Masao,Hasegawa Fumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Ru-doped β-FeSi₂ polycrystalline thin films by RF magnetron sputtering;Japanese Journal of Applied Physics;2022-12-15

2. Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering;Japanese Journal of Applied Physics;2020-01-30

3. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm;Journal of Applied Physics;2017-03-21

4. Time-resolved photoluminescence properties of ion-beam-synthesized β-FeSi2and Si-implanted Si;Japanese Journal of Applied Physics;2015-05-21

5. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06

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