A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm-Reference-Cited by-同舟云学术

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

Published:2017-03-21 Issue:11 Volume:121 Page:113101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shevlyagin A. V.¹^ORCID,Goroshko D. L.¹²,Chusovitin E. A.¹^ORCID,Balagan S. A.¹,Dotsenko S. A.¹²^ORCID,Galkin K. N.¹^ORCID,Galkin N. G.¹²^ORCID,Shamirzaev T. S.³⁴⁵,Gutakovskii A. K.³⁵^ORCID,Latyshev A. V.³,Iinuma M.⁶,Terai Y.⁶^ORCID

Affiliation:

1. Institute of Automation and Control Processes FEB RAS, Radio St. 5, Vladivostok, Russia

2. Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, Vladivostok, Russia

3. Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentieva Ave.13, Novosibirsk, Russia

4. Ural Federal University, Mira St. 19, Yekaterinburg, Russia

5. Novosibirsk State University, Pirogova St. 2, 630090 Novosibirsk, Russia

6. Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan

Funder

Russian Foundation for Basic Research (RFBR)

Russian Science Foundation (RSF)

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978372

Reference74 articles.

1. Single-chip microprocessor that communicates directly using light

2. Integrated Optics: An Introduction

3. Handbook of Silicon Photonics

4. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

5. Monolithically Integrated High-β Nanowire Lasers on Silicon

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