Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-µm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

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Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-µm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors

Published:2004-04-27 Issue:4B Volume:43 Page:1914-1918
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Bok-Hyung,Kim Sam-Dong,Rhee Jin-Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance W-Band Mhemt Low Noise Amplifier using Millimeter-Wave Tuner System;Microwave and Optical Technology Letters;2013-06-27

2. A high isolation W-band MMIC drain type cascode single balanced mixer;Current Applied Physics;2012-05

3. Design and fabrication of 94GHz MMIC single balanced resistive mixer without IF balun;Microelectronics Journal;2010-10

4. High-performance W-band MMIC mixer module using GaAs metamorphic HEMT;Microwave and Optical Technology Letters;2010-02-11

5. Millimeter-Wave Monolithic Integrated Circuit for Wireless LAN;Wireless Networks and Mobile Communications;2008-05-28

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