Author:
Lee Sang-Jin,Baek Yong-Hyun,Baek Tae-Jong,Han Min,Choi Seok-Gyu,Ko Dong-Sik,Jeon Byoung-Chul,Rhee Jin-Koo
Reference17 articles.
1. A single-chip 94-GHz frequency source using InP-based HEMT-HBT integration technology,;Wang;2003 IEEE MTT-S Digest,1998
2. Low noise In0.32(AlGa)0.68As/In0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850mW/mm output power density,;Whelan;IEEE Electron Device Letters,2000
3. Katherine J. Herrick, Steven M. Lardizabal, Phil F. Marsh, and Colin S. Whelan, 95GHz metamorphic HEMT power amplifiers on GaAs, 2003 IEEE MTT-S Digest, 2003, pp. 137–140.
4. Bok-Hyung Lee, An, D., Mun-Kyo Lee; Byeong-Ok Lim, S.-D. Kim, Jin-Koo Rhee, Two-stage broadband high-gain W-band amplifier using 0.1μm metamorphic HEMT technology, IEEE Electron Device Letters, 25 (12) (2004) 766–768.
5. Bok-Hyung Lee, An, D., Mun-Kyo Lee, Byeong-Ok Lim, Jung-Hun Oh, S.-D. KIM, Jin-Koo Rhee, Jung-Dong Park, Sang-Yong Yi, Low conversion loss and high LO-RF isolation 94-GHz active down converter, Microwave Theory and Techniques, IEEE Transactions 54 (6) (2006) 2422–2430.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献