Two-Gate Transistor for the Study of Si/SiO2Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device-Reference-Cited by-同舟云学术

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Two-Gate Transistor for the Study of Si/SiO2Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device

Published:2000-07-30 Issue:Part 1, No. 7B Volume:39 Page:4637-4641
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hinds Bruce J.,Nishiguchi Katsuhiko,Dutta Amit,Yamanaka Takayuki,Hatanani Shigeo,Oda Shunri

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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