Structural changes in HfSe<sub>2</sub> and ZrSe<sub>2</sub> thin films with various oxidation methods-Reference-Cited by-同舟云学术

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Structural changes in HfSe₂ and ZrSe₂ thin films with various oxidation methods

Published:2024 Issue:26 Volume:12 Page:9677-9684
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Foucher Alexandre C.¹^ORCID,Mortelmans Wouter¹,Bing Wu²^ORCID,Sofer Zdeněk²,Jaramillo Rafael¹^ORCID,Ross Frances M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic

Abstract

Plasma oxidation is the most efficient method to form defect-free oxide layers on top of HfSe2 and ZrSe2 transition metal dichalcogenides, whereas thermal oxidation causes the formation of defects and cavities in the oxide.

Funder

National Science Foundation

Ministerstvo Školství, Mládeže a Tělovýchovy

Semiconductor Research Corporation

Office of Naval Research

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04698B

Reference37 articles.

1. Atomic-Scale Mechanisms of MoS₂Oxidation for Kinetic Control of MoS₂/MoO₃Interfaces

2. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

3. Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

4. Benchmarking monolayer MoS2 and WS2 field-effect transistors

5. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

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