Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation-Reference-Cited by-同舟云学术

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Published:2018 Issue:37 Volume:10 Page:17557-17566
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kim HyunJeong¹²³⁴⁵^ORCID,Kim WungYeon¹²³⁴⁵,O'Brien Maria¹²³⁴,McEvoy Niall¹²³⁴^ORCID,Yim Chanyoung⁶⁷⁸⁹¹⁰,Marcia Mario¹¹¹²¹³¹⁴,Hauke Frank¹¹¹²¹³¹⁴,Hirsch Andreas¹¹¹²¹³¹⁴^ORCID,Kim Gyu-Tae⁵¹⁵¹⁶¹⁷^ORCID,Duesberg Georg S.¹²³⁴⁶^ORCID

Affiliation:

1. CRANN&AMBER Centres and School of Chemistry

2. Trinity College Dublin

3. Dublin 2

4. Ireland

5. School of Electrical Engineering

6. Institute of Physics

7. EIT 2

8. Faculty of Electrical Engineering and Information Technology

9. Universität der Bundeswehr München

10. 85577 Neubiberg

11. Chair of Organic Chemistry II

12. Friedrich-Alexander University of Erlangen-Nürnberg

13. 91058 Erlangen

14. Germany

15. Korea University

16. Seoul 02841

17. South Korea

Abstract

High mobility, fully encapsulated field-effect transistors with non-covalently functionalised molybdenum disulfide (MoS₂) channels grown by chemical vapour deposition are reported.

Funder

National Research Foundation of Korea

Science Foundation Ireland

Korean National Police Agency

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR02134A