Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor-Reference-Cited by-同舟云学术

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Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor

Published:2000-10-15 Issue:Part 1, No. 10 Volume:39 Page:5773-5775
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Tae-Kyung,Kim Gi-Bum,Yoon Yeo-Geon,Kim Chang-Hoon,Lee Byung-Il,Joo Seung-Ki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing;Acta Physica Polonica A;2011-07

2. Tin induced crystallisation of hydrogenated amorphous silicon thin films;Materials Science and Technology;2010-07

3. Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C;Japanese Journal of Applied Physics;2007-11-06

4. Xenon Flash Lamp Annealing of Poly-Si Thin Films;Journal of The Electrochemical Society;2006

5. Precise Control of Nucleation and Growth in Lead Zirconate Titanate Thin Films by Scanning Rapid Thermal Annealing;MRS Proceedings;2001

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