Influence of AlN Buffer on Phase Structure of GaN on GaAs (001) Grown by Radio-Frequency Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Influence of AlN Buffer on Phase Structure of GaN on GaAs (001) Grown by Radio-Frequency Molecular Beam Epitaxy

Published:2000-08-15 Issue:Part 1, No. 8 Volume:39 Page:4704-4706
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Zhiqiang,Chen Hong,Liu Hongfei,Yang Ning,Zhang Manhong,Wan Li,Huang Qi,Zhou Junming,Tao Kun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CVD Growth of MoS2-based Two-dimensional Materials;Chemical Vapor Deposition;2015-11-13

2. X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy;Semiconductors;2007-05

3. On the Mechanism of GaN layer growth and defect formation in the GaN-GaAs system;Bulletin of the Lebedev Physics Institute;2007-04

4. Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates;Inorganic Materials;2006-12

5. Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates;Inorganic Materials;2006-08

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