Tin Oxide Films by Chemical Vapor Deposition Using a Monobutyltin Trichloride Source: The Effect of H2O on Deposition Behavior and Electrical Properties-Reference-Cited by-同舟云学术

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Tin Oxide Films by Chemical Vapor Deposition Using a Monobutyltin Trichloride Source: The Effect of H2O on Deposition Behavior and Electrical Properties

Published:2000-02-15 Issue:Part 1, No. 2A Volume:39 Page:407-412
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Si-Moo,Kim Dong-Lae,Youn Hyuk-Joon,Hong Kug Sun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrolysis and condensation of monobutyltin chloride: reaction process analysis with DFT;RSC Advances;2023

2. Computational Thermochemistry of Mono- and Dinuclear Tin Alkyls Used in Vapor Deposition Processes;The Journal of Physical Chemistry A;2019-02-12

3. A Facile Synthesis of Organotin(IV) Carboxylates: Application as Single Source Precursor for Deposition of Tin Oxide Thin Films and Evaluation of Biological Activities;ChemistrySelect;2018-10-02

4. Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics;Microelectronic Engineering;2012-01

5. The influence of methanol addition during the film growth of SnO2 by atmospheric pressure chemical vapor deposition;Thin Solid Films;2011-07

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