Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory-Reference-Cited by-同舟云学术

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Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Published:2000-03-15 Issue:Part 1, No. 3A Volume:39 Page:989-993
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohba Ryuji,Sugiyama Naoharu,Koga Junji,Uchida Ken,Toriumi Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-assembling formation of Si-QDs on SiO₂ line patterns;Japanese Journal of Applied Physics;2024-02-07

2. Alignment control of self-assembling Si quantum dots;Materials Science in Semiconductor Processing;2023-08

3. The Periodicity Effect on the Charge Storage Characteristic of Multistacked nc-Si Floating Gate;Journal of Nanoscience and Nanotechnology;2013-02-01

4. Memory Functions of Nanocrystalline ITO Embedded Zirconium-Doped Hafnium Oxide High-kCapacitor with ITO Gate;Journal of The Electrochemical Society;2012

5. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor;IEICE Transactions on Electronics;2011

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