Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing-Reference-Cited by-同舟云学术

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Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

Published:2000-01-15 Issue:Part 2, No. 1A/B Volume:39 Page:L19-L21
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cheng Huang-Chung,Huang Chun-Yao,Wang Fang-Shing,Lin Kuen-Hsien,Tarntair Fu-Gow

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing;Journal of Nanoscience and Nanotechnology;2020-07-01

2. Large‐scale data principal component analysis of phase transition from a‐Si:H to nc‐Si:H using PECVD optical emission spectra;Micro & Nano Letters;2020-04

3. Stacked Sidewall-Damascene Double-Layer Poly-Si Trigate FETs With RTA-Improved Crystallinity;IEEE Electron Device Letters;2018-04

4. Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band;IEEE Photonics Journal;2016-10

5. Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation;Thin Solid Films;2013-05

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