Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes;International Journal of Electronics;1999-09
2. Trap signatures of As precipitates and As‐antisite‐related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures;Applied Physics Letters;1996-10-21
3. High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy;Applied Physics Letters;1996-02-05
4. Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers;Japanese Journal of Applied Physics;1994-06-15
5. Effects of Low-Temperature Grown GaAs Intermediate Layers on the Crystalline Quality of GaAs-on-Si Epilayers;MRS Proceedings;1994
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