Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers
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Published:1994-06-15
Issue:Part 2, No. 6B
Volume:33
Page:L826-L829
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Tan Leng Seow,Lau Wai Shing,Samudra Ganesh Shankar,Lee Kin Man,Ang Boon Yong
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering