Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5as the Buffer Layer-Reference-Cited by-同舟云学术

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Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5as the Buffer Layer

Published:2001-04-30 Issue:Part 1, No. 4B Volume:40 Page:2940-2942
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Hoon Sang,Kim Yong Tae,Kim Seong-Il,Choi In-Hoon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Basic Characteristics of Pt∕SrBi[sub 2]Ta[sub 2]O[sub 9]∕HfO[sub 2]∕Si Structure Using Layer-By-Layer Crystallization;Journal of The Electrochemical Society;2005

2. Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures;Japanese Journal of Applied Physics;2003-11-10

3. High-performance Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure for nondestructive readout memory;IEEE Electron Device Letters;2003-09

4. Growth and characterization of Al2O3 thin films for the buffer insulator in Pt/SrBi2Nb2O9/Al2O3/Si ferroelectric gate oxide structure;Metals and Materials International;2003-06

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