Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy

Published:2001-05-15 Issue:Part 1, No. 5A Volume:40 Page:3114-3119
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Osaka Jiro,Matsuzaki Hideaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates;Japanese Journal of Applied Physics;2014-02-24

2. Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes;Nanoscale Research Letters;2011-11-23

3. Extremely High Peak Current Densities of over 1×106A/cm2in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy;Japanese Journal of Applied Physics;2010-05-20

4. Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05

5. High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices;Japanese Journal of Applied Physics;2007-04-24

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