Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate-Reference-Cited by-同舟云学术

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Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Published:2001-02-15 Issue:Part 2, No. 2B Volume:40 Page:L140-L143
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Motoki Kensaku,Okahisa Takuji,Matsumoto Naoki,Matsushima Masato,Kimura Hiroya,Kasai Hitoshi,Takemoto Kikurou,Uematsu Koji,Hirano Tetsuya,Nakayama Masahiro,Nakahata Seiji,Ueno Masaki,Hara Daijirou,Kumagai Yoshinao,Koukitu Akinori,Seki Hisashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 329 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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