An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel-Reference-Cited by-同舟云学术

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An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel

Published:2001-01-15 Issue:Part 2, No. 1A/B Volume:40 Page:L7-L9
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Yeong-Jia,Chen Yen-Wei,Lin Yu-Shyan,Yeh Chia-Yen,Li Yih-Juan,Hsu Wei-Chou

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation of Intramolecularly Coordinated Distannyne by S 8 : From Tin(I) to Tin(IV) Polysulfide Via Tin(II) Sulfide;Chemistry – A European Journal;2010-12-07

2. Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor;Journal of The Electrochemical Society;2005

3. Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer;Journal of Applied Physics;2002-02

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