Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1421631
Reference17 articles.
1. High-speed integrated logic with GaAs MESFET's
2. Planar GaAs IC technology: Applications for digital LSI
3. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
4. Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
5. Thermal Conductivity and Seebeck Coefficient of InP
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